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| inchange semiconductor product specification silicon npn power transistors BUF405AFP description ? ? with to-220f package ? high voltage,high speed applications ? switch mode power supplies ?motor drivers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 7.5 a i cm collector current-peak t p <5ms 15 a i b base current (dc) 3 a i bm base current-peak t p <5ms 4.5 a p tot total power dissipation t c =25 ?? 39 w t j maximum operating junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-case thermal resistance junction to case 3.2 ??/w fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUF405AFP characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =200ma ; i b =0; l=25mh 450 v v (br)ebo emitter-base breakdwon voltage i e =50ma ;i c =0 7 v v cesat-1 collector-emitter saturation voltage i c =2.5a; i b =0.25a t c =100 ?? 0.8 2.8 v v cesat-2 collector-emitter saturation voltage i c =5a ;i b =1a t c =100 ?? 0.5 2.0 v v besat-1 base-emitter saturation voltage i c =2.5a; i b =0.25a t c =100 ?? 0.9 1.5 v v besat-2 base-emitter saturation voltage i c =5a ;i b =1a t c =100 ?? 1.1 1.5 v i cev collector cut-off current v ce =1000v; v be =-1.5v t c =100 ?? 100 500 | a i ebo emitter cut-off current v eb =5v; i c =0 1 ma switching times inductive load t s storage time 0.8 | s t f fall time i c =2.5a ;v cc =50v i b1 =0.25a;v bb =-5v ;l=1mh r bb =2.4 |? ;v clamp =400v 0.05 | s inchange semiconductor product specification 3 silicon npn power transistors BUF405AFP package outline fig.2 outline dimensions |
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